Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material
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United States of America Patent
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Jan 2, 2024
Grant Date -
Feb 25, 2021
app pub date -
Oct 21, 2020
filing date -
Mar 21, 2018
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Abstract
A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.
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