WAK devices in SRAM cells for improving VCCMIN

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United States of America Patent

PATENT NO 7733687
APP PUB NO 20090207675A1
SERIAL NO

12034416

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A memory circuit includes a bit line; a word line; a first power supply node having a first power supply voltage; a first power supply line connected to the first power supply node; a second power supply node selected from a group consisting of a floating node and a node having a second power supply voltage lower than the first power supply voltage; a second power supply line configured to switch connections between the first and the second power supply nodes; a write-assist-keeper (WAK) device coupling the first and the second power supply lines; and a static random access memory (SRAM) cell connected to the bit line, the word line and the second power supply line.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kengeri, Subramani San Jose, US 51 637
Upputuri, Bharath Santa Clara, US 21 140

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