Wrap-around source/drain method of making contacts for backside metals
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United States of America
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Mar 1, 2022
Grant Date -
Aug 2, 2018
app pub date -
Sep 25, 2015
filing date -
Sep 25, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
An apparatus including a circuit structure including a first side including a device layer including a plurality of devices and an opposite second side; an electrically conductive contact coupled to one of the plurality of devices on the first side; and an electrically conductive interconnect disposed on the second side of the structure and coupled to the conductive contact. A method including forming a transistor device including a channel between a source and a drain and a gate electrode on the channel defining a first side of the device; forming an electrically conductive contact to one of the source and the drain from the first side; and forming an interconnect on a second side of the device, wherein the interconnect is coupled to the contact.
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