Amorphous silicon germanium thin film and photovoltaic element
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United States of America Patent
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Jun 27, 2000
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N/A
app pub date -
Feb 25, 1998
filing date -
Feb 27, 1997
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Abstract
An amorphous silicon germanium thin film is disclosed which contains hydrogen and germanium in concentrations of 5-10 atomic percent and 40-55 atomic percent, respectively for exhibiting the optical gap in the range of 1.30-1.40 eV. Also disclosed is a photovoltaic element incorporating the amorphous silicon germanium thin film.
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