High-electron mobility transistor terahertz wave modulator loaded in waveguide

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United States of America Patent

PATENT NO 11442295
APP PUB NO 20200259235A1
SERIAL NO

16858750

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A high-electron mobility transistor (HEMT) array terahertz wave modulator loaded in a waveguide is provided, which belongs to the technical field of electromagnetic functional devices and focuses on fast dynamic functional devices in the terahertz band. The device comprises a waveguide cavity and a modulation chip. The modulation chip comprises a semiconductor material substrate, a heterostructure material epitaxial layer, an artificial microstructure, and a socket circuit. The applied voltage controls the distribution change of the two-dimensional electron gas in the HEMT, which in turn controls the resonance mode conversion in the artificial microstructure, thereby control the transmission of electromagnetic waves in the waveguide. The modulator has a modulation depth of up to 96% and a modulation rate above 2 GHz.

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Patent OwnerAddress
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA611731 NO 2006 WEST AVENUE CHENGDU HI TECH ZONE (WEST DISTRICT SICHUAN) CHENGDU CITY SICHUAN PROVINCE 611731

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feng, Zhihong Sichuan, CN 27 33
Liang, Shixiong Sichuan, CN 13 13
Yang, Ziqiang Yang Sichuan, CN 2 0
Zhang, Xilin Sichuan, CN 8 4
Zhang, Yaxin Sichuan, CN 20 258

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