Method for preparing memory array with contact enhancement sidewall spacers

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United States of America Patent

PATENT NO 11785757
APP PUB NO 20230156998A1
SERIAL NO

17528490

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Abstract

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A method for preparing the memory are provided. The method includes forming a trench at a front side of a semiconductor substrate, wherein the trench defines laterally separate active areas formed of surface regions of the semiconductor substrate; filling an isolation structure in the trench, wherein the isolation structure is filled to a height lower than top surfaces of the active areas; recessing a first group of the active areas from top surfaces of the first group of the active areas, while having top surfaces of a second group of the active areas covered; and forming contact enhancement sidewall spacers to laterally surround top portions of the active areas, respectively.

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Patent Owner(s)

  • NANYA TECHNOLOGY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Yuan-Yuan Taoyuan, TW 19 21

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