Memory element and method for fabricating a memory element
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United States of America Patent
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May 4, 2004
Grant Date -
Sep 11, 2003
app pub date -
Apr 21, 2003
filing date -
Aug 9, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A memory element with organic material comprises two metallized layers, arranged one on top of the other, with first lines and second lines which are arranged to intersect with each other. A channel is formed at the intersections between the first line and the second line, which overlaps the first line partially and completely overlaps the second line. The channels are filled with a filling material, the electrical conductivity of which may be altered by an applied electrical voltage.
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