Contamination reduction during ion implantation
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United States of America Patent
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Jun 9, 2009
Grant Date -
Sep 25, 2008
app pub date -
Mar 23, 2007
filing date -
Mar 23, 2007
priority date (Note) -
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Abstract
A method includes generating an ion beam having ions at a first charge state, accelerating the ions at the first charge state to a final energy, altering the first charge state to a second charge state for some of said ions, the second charge state less than the first charge state, providing an ion beam having ions at the second charge state and parasitic beamlets having ions at a charge state different than the second charge state, directing the ion beam having ions at the second charge state towards a wafer, and directing the parasitic beamlets away from the wafer. An ion implanter having a charge exchange apparatus is also provided.
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