Semiconductor devices with vertical structure including data storage layer or pattern
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United States of America Patent
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Aug 5, 2014
Grant Date -
Feb 14, 2013
app pub date -
Aug 3, 2012
filing date -
Aug 10, 2011
priority date (Note) -
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Abstract
A semiconductor device includes a first horizontal molding pattern, a horizontal electrode pattern disposed on the first horizontal molding pattern, and a second horizontal molding pattern disposed on the horizontal electrode pattern. A vertical structure extends through the horizontal patterns. The vertical structure includes a vertical electrode pattern, a data storage pattern interposed between the vertical electrode pattern and the horizontal patterns, a first buffer pattern interposed between the data storage pattern and the first molding pattern, and a second buffer pattern interposed between the data storage pattern and the second molding pattern and spaced apart from the first buffer pattern.
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