High mobility crystalline planes in double-gate CMOS technology
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United States of America Patent
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Sep 21, 2004
Grant Date -
Jun 24, 2004
app pub date -
Dec 19, 2002
filing date -
Dec 19, 2002
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Abstract
A MOS device with first and second freestanding semiconductor bodies formed on a substrate. The first freestanding semiconductor body has a first portion thereof disposed at a non-orientation orthogonal, non parallel orientation with respect to a first portion of the second freestanding semiconductor body. These portions of said first and second freestanding semiconductor bodies have respective first and second crystalline orientations. A first gate electrode crosses over at least part of said first portion of said first freestanding semiconductor body at a non-orthogonal angle, as does a second gate electrode over the first portion of the second freestanding semiconductor body.
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