Method of fabricating semiconductor device for preventing a pillar pattern from bending and from exposing externally
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United States of America Patent
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Nov 9, 2010
Grant Date -
Oct 8, 2009
app pub date -
Dec 16, 2008
filing date -
Apr 4, 2008
priority date (Note) -
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Abstract
A method of fabricating a semiconductor device includes forming a plurality of pillar patterns on a substrate, filling a gap between the pillar patterns with a first conductive layer, forming a first hard mask layer pattern over the pillar patterns adjacent in one direction, etching the first conductive layer using the first hard mask layer pattern as an etch barrier, forming a second hard mask pattern over the pillar pattern adjacent in the other direction that crosses the one direction, and forming a gate electrode surrounding the pillar patterns by etching the first conductive layer etched using the second hard mask layer pattern as an etch barrier.
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