Semiconductor device
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United States of America Patent
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May 31, 2005
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N/A
app pub date -
Sep 8, 1992
filing date -
Jun 30, 1980
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Abstract
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region formed primarily of semi-amorphous semiconductor. The second semi-conductor region has a higher degree of conductivity than the first semiconductor region so that a semi-conductor element ray be formed.
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