Manufacturing method of semiconductor device and substrate processing apparatus

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United States of America Patent

PATENT NO 7531467
SERIAL NO

10574571

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Abstract

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To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device., and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.

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Patent Owner(s)

  • HITACHI KOKUSAI ELECTRIC INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Asai, Masayuki Toyama , JP 34 2029
Horii, Sadayoshi Toyama, JP 41 2093
Itatani, Hideharu Toyama, JP 47 2475
Sano, Atsushi Toyama, JP 176 2777

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