Semiconductor memory device having cell source structure and manufacturing method thereof

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United States of America Patent

PATENT NO 11189625
SERIAL NO

16936203

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Abstract

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There are provided a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes: a cell source structure; a first stack structure disposed on the cell source structure; a channel structure penetrating the first stack structure, the channel structure being connected to the cell source structure; and a first peripheral transistor including impurity regions. A level of a bottom surface of each of the impurity regions is higher than that of a bottom surface of the cell source structure, and a level of a top surface of each of the impurity regions is lower than that of a top surface of the cell source structure.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jung, Hye Yeong Icheon-si, KR 17 12
Kim, Jae Taek Icheon-si, KR 40 26

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