Semiconductor device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11735424
APP PUB NO 20220277959A1
SERIAL NO

17748006

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Abstract

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A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.

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Patent Owner(s)

  • FUJI ELECTRIC CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Agata, Yasunori Matsumoto, JP 22 28
Harada, Yuichi Matsumoto, JP 61 426
Ikura, Yoshihiro Matsumoto, JP 34 205
Kodama, Naoko Matsumoto, JP 25 157
Meguro, Misaki Matsumoto, JP 16 19
Noguchi, Seiji Matsumoto, JP 52 147
Sakurai, Yosuke Azumino, JP 31 81
Takishita, Hiroshi Matsumoto, JP 59 333
Yoshimura, Takashi Matsumoto, JP 147 1037

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