Methods and structures for semiconductor device testing

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11982709
APP PUB NO 20230375616A1
SERIAL NO

17749815

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Abstract

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A structure for performing analysis includes a first opening formed on a back side of a substrate and passing through the substrate, a second opening connected with a bottom of the first opening and penetrating into a first dielectric layer formed on a front side of the substrate, a first conductive layer formed on a sidewall of the second opening and a contact element in the first dielectric layer, and a second conductive layer formed on a second dielectric layer. The first conductive layer contacts the second conductive layer electrically.

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Patent Owner(s)

  • YANGTZE MEMORY TECHNOLOGIES CO., LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Du, Xiaoqiong Wuhan, CN 2 0
Qi, Lin Wuhan, CN 22 37
Tong, Jinyu Wuhan, CN 1 0
Wang, Juan Wuhan, CN 142 484

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