Sensor device for transcapacitive sensing with shielding
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United States of America Patent
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Dec 6, 2022
Grant Date -
N/A
app pub date -
Jun 4, 2021
filing date -
Jun 4, 2021
priority date (Note) -
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Abstract
A silicon sensor device includes a plurality of metal layers and a plurality of dielectric layers. The plurality of metal layers include: a first metal layer comprising a plurality of transmitter electrodes and a plurality of receiver electrodes; a second metal layer disposed beneath the first metal layer, wherein the second metal layer comprises a plurality of routing traces for the plurality of transmitter electrodes; and one or more circuit layers disposed beneath the second metal layer. A respective routing trace for a respective transmitter electrode is configured to shield respective portions of the plurality of receiver electrodes which correspond to a width of the respective transmitter electrode from energy and/or noise originating from the one or more circuit layers. The plurality of metal layers and the plurality of dielectric layers are disposed on a same die.
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