Importance

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Abstract

A method of manufacturing a non-volatile memory device includes the steps of: defining an active region on a semiconductor substrate; forming a charge storage layer on the active region; forming a first conductive pattern on the charge storage layer, wherein the first conductive pattern has a bottom portion larger in width than a top portion thereof, the first conductive pattern further having a sloping sidewall connecting the top and bottom portions; forming an oxide layer on the sidewall of the first conductive pattern; forming a conformal second conductive layer on the first conductive pattern and on the active region around the first conductive pattern; and patterning the first conductive pattern and the second conductive layer to form a pair of first electrodes and a pair of second electrodes, respectively.

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First Claim