Manufacturing method for semiconductor device

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United States of America Patent

PATENT NO 7816160
SERIAL NO

12201114

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Abstract

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The present invention includes forming an optical guide layer on a substrate, forming a cap layer on the optical guide layer, and forming openings in parts of the optical guide layer and the cap layer to form a diffraction grating from part of the optical guide layer. The substrate is heated to a temperature less than a growth temperature of the cap layer and equal to at least a temperature at which mass transport of the cap layer occurs to cover, with part of the cap layer, the lateral faces of the optical guide layer exposed by the openings. A burying layer burying the diffraction grating is formed on the substrate, after the mass transport.

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Patent Owner(s)

  • MITSUBISHI ELECTRIC CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nagira, Takashi Tokyo, JP 13 9
Watatani, Chikara Tokyo, JP 18 61

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