Nonvolatile semiconductor memory device
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United States of America Patent
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Sep 9, 2008
Grant Date -
Sep 21, 2006
app pub date -
Mar 16, 2006
filing date -
Mar 16, 2005
priority date (Note) -
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Abstract
A path routing from a write current source supplying a write current through an internal data line, a bit line and a source line to a reference potential except a memory cell is configured to have a constant resistance independent of a memory cell position selected in a memory array, and each of the resistance value of the current path between the memory cell and the write current source and the resistance value of the current path between the selected memory cell and the reference potential node is set to 500.OMEGA. or lower. A nonvolatile semiconductor memory device having improved reliability of data read/write is achieved.
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