Semiconductor device and method for fabricating the same
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United States of America Patent
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Jul 24, 2007
Grant Date -
Apr 28, 2005
app pub date -
Oct 22, 2004
filing date -
Oct 23, 2003
priority date (Note) -
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Abstract
A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor layer, and an electrode having an ohmic property and formed selectively on the second nitride semiconductor layer. The second nitride semiconductor layer includes a contact area having at least one inclined portion with a bottom or wall surface thereof being inclined toward the upper surface of the first nitride semiconductor layer and defining a depressed cross-sectional configuration. The electrode is formed on the contact area.
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