Semiconductor device for a volatile memory and method of manufacturing semiconductor device

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United States of America Patent

PATENT NO 11244947
SERIAL NO

17081004

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Abstract

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A semiconductor device for a volatile memory is disclosed. The semiconductor device includes a substrate, a side wall and an epitaxial liner. The substrate has a first height and is made of a first material having a first lattice parameter. The side wall defines a deep trench. The epitaxial liner is disposed around the side wall, is made of a second material having a second lattice parameter, and has a second height having a same level with the first height, wherein the epitaxial liner and the side wall cooperate for creating a desired aspect ratio for the deep trench.

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Patent Owner(s)

  • HEFECHIP CORPORATION LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Yanzun Lagrangeville, US 3 0
Liu, Huang Mechanicville, US 119 731
Sadana, Devendra K Pleasantville, US 897 9915
Zhang, John Altamont, US 92 1675

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