Semiconductor memory device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 10643723
SERIAL NO

16275707

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Abstract

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At a time of writing first data to a first memory cell, second data which is written later to an adjacent second memory cell is referred to, and when a value of the second data corresponds to a first threshold level, a verify voltage is set to a first verify voltage, and when the value of the second data corresponds to a second threshold level greater than the first threshold level, the verify voltage is set to a second verify voltage smaller than the first verify voltage.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Umezawa, Yusuke Yokohama, JP 12 43

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