Silicon epitaxial wafer production method and silicon epitaxial wafer

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United States of America

PATENT NO 11990336
APP PUB NO 20220020585A1
SERIAL NO

17296281

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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To provide a silicon epitaxial wafer production method and a silicon epitaxial wafer in which the DIC defects can be suppressed, a silicon epitaxial wafer production method is provided, in which an epitaxial layer is grown in a vapor phase on a principal plane of a silicon single crystal wafer. The principal plane is a {110} plane or a plane having an off-angle of less than 1 degree from the {110} plane. The silicon epitaxial wafer production method includes setting a temperature of the silicon single crystal wafer to 1100° C. to 1135° C. and growing the epitaxial layer in the vapor phase at a growth rate of 2.0 μm/min to 3.0 μm/min.

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Patent Owner(s)

  • SUMCO CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishibashi, Masayuki Tokyo, JP 56 415
Maruoka, Daisuke Tokyo, JP 6 5
Yoshida, Midori Tokyo, JP 3 3

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