Semiconductor structure and method of manufacture
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United States of America Patent
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Feb 12, 2008
Grant Date -
May 3, 2007
app pub date -
Nov 2, 2005
filing date -
Nov 2, 2005
priority date (Note) -
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Abstract
A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness, different from the first thickness. A method is also contemplated which includes providing a substrate including a first layer and forming a first doped region in the first layer. The method further includes forming a second layer on the first layer and forming a second doped region in the second layer. The second doped region is formed at a different depth than the first doped region. The method also includes forming a first reachthrough in the first layer and forming a second reachthrough in second layer to link the first reachthrough to the surface.
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