Semiconductor device and method of manufacturing the same
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United States of America Patent
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Aug 16, 2016
Grant Date -
N/A
app pub date -
Dec 2, 2015
filing date -
Oct 8, 2015
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor device, including gate electrodes perpendicularly stacked on a substrate; channel holes extending perpendicularly to the substrate, the channel holes penetrating through the gate electrodes, the channel holes having a channel region; gate pads extended from the gate electrodes by different lengths; and contact plugs connected to the gate pads, at least a portion of the gate pads having a region having a thickness less than a thickness of the gate electrode connected to the at least a portion of the gate pads.
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