Systems and methods for hafnium-containing film removal

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United States of America Patent

PATENT NO 11682560
APP PUB NO 20200118829A1
SERIAL NO

16157419

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Abstract

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Exemplary etching methods may include flowing a halogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The halogen-containing precursor may be characterized by a gas density greater than or about 5 g/L. The methods may include contacting a substrate housed in the substrate processing region with the halogen-containing precursor. The substrate may define an exposed region of a hafnium-containing material. The methods may also include removing the hafnium-containing material.

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Patent Owner(s)

  • APPLIED MATERIALS INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cui, Zhenjiang San Jose, US 59 2769
Holm, Daniella San Jose, US 4 7
Zhang, Hanshen Cupertino, US 14 2003

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