Method for preparing semiconductor device with copper-manganese liner

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United States of America Patent

PATENT NO 11876045
APP PUB NO 20230230918A1
SERIAL NO

18124748

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Abstract

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The present disclosure provides a method for preparing a semiconductor device with a copper-manganese liner. The method includes forming an opening structure in a first dielectric layer, wherein the opening structure has a first portion, a second portion and a third portion disposed between and physically connecting the first portion and the second portion; forming a lining material lining the first portion and the second portion of the opening structure and completely filling the third portion of the opening structure, wherein the lining material includes copper-manganese (CuMn); filling the first portion and the second portion of the opening structure with a conductive material after the lining material is formed; and performing a planarization process on the lining material and the conductive material.

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Patent Owner(s)

Patent OwnerAddress
NANYA TECHNOLOGY CORPORATIONNO 98 NANLIN RD TAISHAN DIST NEW TAIPEI CITY 243

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Chin-Ling Taoyuan, TW 37 35

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