Semiconductor storage device with memory cell utilized as a set-dedicated memory cell
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United States of America Patent
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Jan 21, 2014
Grant Date -
Nov 15, 2012
app pub date -
May 8, 2012
filing date -
May 10, 2011
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Abstract
A semiconductor storage device crystallizes variable resistive element material layers arranged on side surfaces of multiple semiconductor layers in a stacked structure concurrently by applying a first current to any one of semiconductor layers in the stacked structure, and thereafter applies a second current to semiconductor layers other than a semiconductor layer to which the first current was applied.
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