Method for fabricating semiconductor device
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United States of America Patent
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Jan 24, 2023
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N/A
app pub date -
Nov 1, 2021
filing date -
Oct 8, 2019
priority date (Note) -
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Abstract
The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate comprising a central array area and a marginal array area surrounding the central array area; concurrently forming a first bit line above the central array area and a first dummy bit line above the marginal array area; and concurrently forming a second bit line above the central array area and a second dummy bit line above the marginal array area. The second bit line is higher than and offset from the first bit line and the second dummy bit line is directly above the first dummy bit line.
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