Semiconductor device including magnetic tunnel junction structure

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United States of America Patent

PATENT NO 11812667
APP PUB NO 20220376166A1
SERIAL NO

17341316

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Abstract

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A semiconductor device includes a substrate, a first magnetic tunnel junction (MTJ) structure, a second MTJ structure, and an interconnection structure. The first MTJ structure, the second MTJ structure, and the interconnection structure are disposed on the substrate. The interconnection structure is located between the first MTJ structure and the second MTJ structure in a first horizontal direction, and the interconnection structure includes a first metal interconnection and a second metal interconnection. The second metal interconnection is disposed on and contacts the first metal interconnection. A material composition of the second metal interconnection is different from a material composition of the first metal interconnection.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPHSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Chia-Chang Kaohsiung, TW 70 395
Kuo, Chih-Wei Tainan, TW 70 341

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