Structure of manufacturing an electrostatic discharge protective circuit for SRAM
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United States of America Patent
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-
Jan 25, 2000
Grant Date -
N/A
app pub date -
Oct 1, 1998
filing date -
Jun 20, 1998
priority date (Note) -
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Abstract
A structure of manufacturing an electrostatic discharge protective circuit for SRAM. In the structure, a MOS transistor is coupled between an input port and an internal circuit, and an input bonding pad is coupled to the input port and the internal circuit. Furthermore, the source of the MOS transistor is connected to the gate of the MOS transistor by a polysilicon layer which is coupled to a potential line. A via connects the drain of the MOS transistor to a metal layer. Then, the metal layer is coupled to the input bonding pad.
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