Method and system of surface topography measurement for lithography

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United States of America Patent

PATENT NO 11835866
APP PUB NO 20230085172A1
SERIAL NO

18051016

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Abstract

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A method includes: providing a workpiece to a semiconductor apparatus, the workpiece including a material layer, wherein the material layer includes a first strip having a first plurality of exposure fields configured to be exposed in a first direction and a second plurality of exposure fields configured to be exposed in a second direction different from the first direction; scanning the first strip along a first scan route in the first direction to generate first topography measurement data; scanning the first strip along a second scan route in the second direction to generate second topography measurement data; and exposing the first plurality of exposure fields according to the first topography measurement data and exposing the second plurality of exposure fields according to the second topography measurement data.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yung-Cheng Hsinchu County, TW 35 748
Chen, Yung-Hsiang Hsinchu County, TW 176 1955
Chu, Yang-Ann Hsinchu, TW 59 173
Lee, Yung-Yao Hsinchu County, TW 69 112
Wang, Yeh-Chin Taipei, TW 3 1

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