Dual work function gate electrodes
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United States of America Patent
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Mar 28, 2006
Grant Date -
Nov 10, 2005
app pub date -
May 5, 2004
filing date -
May 5, 2004
priority date (Note) -
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Abstract
Methods of manufacturing transistor gate electrodes including, in one embodiment, forming a metal layer over first and second regions of a substrate, wherein the first and second regions have different first and second dopant types, respectively. A semiconductor layer is formed over at least a portion of the second region. The metal layer is heated to form a metal gate electrode over the first region, and the metal layer and the semiconductor layer are collectively heated to form a composite metal gate electrode over the second region.
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