Nonvolatile memory device
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United States of America Patent
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Mar 30, 2010
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N/A
app pub date -
Nov 17, 2006
filing date -
Dec 7, 2005
priority date (Note) -
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Abstract
Disclosed are nonvolatile memory devices and methods of fabricating the same. A nonvolatile memory device can include a field isolation film configured to define active regions in a substrate and a wordline configured to intersect the active regions. Devices can also include source and drain regions formed in each of the active regions at both sides of the wordline and a source line configured to extend along the wordline under the source region. Devices can further include a join region configured to connect the source region with the source line.
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