Semiconductor device and method of manufacturing a semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11211459
APP PUB NO 20200194558A1
SERIAL NO

16715439

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Importance

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Abstract

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An auxiliary carrier and a silicon carbide substrate are provided. The silicon carbide substrate includes an idle layer and a device layer between a main surface at a front side of the silicon carbide substrate and the idle layer. The device layer includes a plurality of laterally separated device regions. Each device region extends from the main surface to the idle layer. The auxiliary carrier is structurally connected with the silicon carbide substrate at the front side. The idle layer is removed. A mold structure is formed that fills a grid-shaped groove that laterally separates the device regions. The device regions are separated, and parts of the mold structure form frame structures laterally surrounding the device regions.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brockmeier, Andre Villach, AT 38 339
Denifl, Guenter Annenheim, AT 19 311
Kern, Ronny Finkenstein, AT 22 15
Knabl, Michael Finkenstein, AT 9 20
Piccin, Matteo Villach, AT 12 13
Santos, Rodriguez Francisco Javier Villach, AT 120 511

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