Process and gas for treatment of semiconductor devices
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United States of America Patent
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-
Dec 1, 1981
Grant Date -
N/A
app pub date -
Nov 11, 1977
filing date -
Nov 11, 1977
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Gas plasma process and gas mixture useful for the removal of materials in the manufacture of semiconductor devices. Substrate wafers or other semiconductor devices are exposed to a gaseous plasma containing SiF.sub.4 or SiF.sub.4 and oxygen for a time sufficient to effect a desired removal of material from the wafer or device. The process and gas are particularly suitable for selective etching of Si.sub.3 N.sub.4 and the stripping of photoresist, as well as the etching of materials such as silicon and compounds containing silicon.
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