Semiconductor device and manufacturing method for the same
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United States of America Patent
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-
Dec 14, 2004
Grant Date -
Aug 12, 2004
app pub date -
Aug 20, 2003
filing date -
Aug 21, 2002
priority date (Note) -
In Force
status (Latency Note)
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Abstract
On a semiconductor substrate having a gate electrode and an LDD layer formed thereon, an SiN film to be a silicide block is formed. An opening communicating with the LDD layer is provided for the SiN film. Impurities are introduced into the LDD layer through the opening to form a source/drain layer, and the surface thereof is silicided to form a silicide film. Next, an interlayer insulation film of SiO.sub.2 is formed and then etched under a condition of an etching rate of SiO.sub.2 higher than that of SiN to form a contact hole reaching the LDD layer from the upper surface of the interlayer insulation film via the opening.
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