Trench type mosgated device with strained layer on trench sidewall
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 3, 2007
Grant Date -
Jun 2, 2005
app pub date -
Aug 4, 2004
filing date -
Aug 13, 2003
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A MOSgated trench device has a reduced on resistance by forming a less than about a 13 nm thick strained SiGe layer on the silicon surface of the trenches and forming a thin (30 nm or less) layer of epitaxially deposited silicon on the SiGe layer which epi layer is converted to a gate oxide layer. The conduction channel formed by the SiGe layer is permanently strained to increase its mobility particularly hole mobility.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully