Hybrid-orientation technology buried n-well design
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United States of America Patent
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Jan 20, 2009
Grant Date -
Oct 4, 2007
app pub date -
Jun 11, 2007
filing date -
Aug 19, 2005
priority date (Note) -
Expired
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Abstract
A semiconductor structure is provided that includes a hybrid orientated substrate having at least two coplanar surfaces of different surface crystal orientations, wherein one of the coplanar surfaces has bulk-like semiconductor properties and the other coplanar surface has semiconductor-on-insulator (SOI) properties. In accordance with the present invention, the substrate includes a new well design that provides a large capacitance from a retrograde well region of the second conductivity type to the substrate thereby providing noise decoupling with a low number of well contacts. The present invention also provides a method of fabricating such a semiconductor structure.
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