Method for producing a semiconductor device

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United States of America Patent

PATENT NO 9236290
APP PUB NO 20120289023A1
SERIAL NO

13365774

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Abstract

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A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahrens, Carsten Pettendorf, DE 62 452
Berger, Rudolf Regensburg, DE 83 883
Frank, Manfred Nittendorf, DE 17 336
Hoeckele, Uwe Regensburg, DE 23 177
Knott, Bernhard Neumarkt, DE 17 80
Krumbein, Ulrich Rosenheim, DE 41 289
Lehnert, Wolfgang Lintach, DE 48 260
Schuderer, Berthold Regensburg, DE 10 37
Wagner, Juergen Nittendorf, DE 34 253
Willkofer, Stefan Regensburg, DE 13 89

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