Method of manufacturing a semiconductor device and a semiconductor device
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United States of America Patent
Stats
-
Dec 17, 2002
Grant Date -
Oct 25, 2001
app pub date -
Apr 3, 2001
filing date -
Apr 25, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Over a plug, a stopper insulating film made of an organic film is formed, followed by successive formation of an insulating film and a hard mask. In the presence of a patterned resist film, the hard mask is dry etched, whereby an interconnection groove pattern is transferred thereto. By ashing with oxygen plasma, the resist film is removed to form the interconnection-groove-pattern-transferred hard mask. At this time, the organic film constituting the stopper insulating film has been covered with the insulating film. Then, the insulating film, stopper insulating film and hard mask are removed to form the groove pattern of interconnection. Hydrogen annealing may be conducted after formation of the plug, or the stopper insulating film may be formed over the plug via an adhesion layer.
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