Magnetoresistive structure having improved thermal stability via magnetic barrier layer within a free layer
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United States of America Patent
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Aug 6, 2002
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N/A
app pub date -
Dec 6, 1999
filing date -
Dec 6, 1999
priority date (Note) -
Expired
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Abstract
An apparatus is described having a portion of a magnetoresistive structure wherein the portion of the magnetoresistive structure includes an oxide seed layer formed upon a substrate; and, a free layer formed upon the oxide seed layer. The free layer comprises a magnetic barrier layer formed over the oxide seed layer. The free layer comprises a magnetic layer formed over the magnetic barrier layer. The magnetic barrier layer has a thickness that prevents reaction between the magnetic layer and the oxide seed layer.
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