Resistive random access memory devices
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United States of America Patent
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Nov 29, 2022
Grant Date -
Nov 18, 2021
app pub date -
May 14, 2020
filing date -
May 14, 2020
priority date (Note) -
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Abstract
The present disclosure generally relates to memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices. The present disclosure provides a memory device including an opening in a dielectric structure, the opening having a sidewall, a first electrode on the sidewall of the opening, a spacer layer on the first electrode, a resistive layer on the first electrode and upon an upper surface of the spacer layer, and a second electrode on the resistive layer.
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