Magnetic random access memory and method of reducing critical current of the same
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United States of America Patent
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Sep 29, 2009
Grant Date -
Aug 28, 2008
app pub date -
Feb 27, 2007
filing date -
Feb 27, 2007
priority date (Note) -
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Abstract
A magnetic random access memory includes a substrate, a free layer and a spacer layer. The substrate and the free layer are made of a vertical anisotropy ferrimagentic thin film. The spacer layer is sandwiched between the substrate and the free layer and is made of an insulating layer. The method uses a modified Landau-Lifshitz-Gilbert equation to obtain a critical current value as a function of exchange coupling constant. The critical current value is predictable under several external magnetic fields being applied. When the exchange coupling constant is proportionally varied, the critical current value is reduced to a third of its original value under an optimum state.
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