Transparent conductors comprising gallium-indium-oxide
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United States of America Patent
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Apr 18, 1995
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Oct 27, 1993
filing date -
Oct 27, 1993
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Abstract
Applicant has discovered that aliovalently doped gallium-indium-oxide (GaInO.sub.3) can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency and improved index matching. The material can be doped to resistivity of less than 10 milliohm-cm by small quantities of aliovalent dopants, such as tetravalent atoms. It has a refractive index of about 1.6 and can be deposited on glass substrates in polycrystalline films.
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