Half power supply voltage generating circuit for a semiconductor device

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United States of America Patent

PATENT NO 5592119
SERIAL NO

08224019

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A half power supply voltage generating circuit receiving first and second power supply voltages and comprising; a bias circuit for generating first and second reference voltages in response to the first and second power supply voltages, and a driver circuit receiving the first and second reference voltages and generating a half power supply voltage, the driver circuit comprising four MOS transistors connected in series between the first and second supply voltages.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yoo, Seung-Moon Kyungki-do, KR 41 630

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