Fabrication of semiconductor device having composite contact
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United States of America Patent
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Mar 9, 2010
Grant Date -
Aug 28, 2008
app pub date -
Jul 23, 2007
filing date -
Feb 23, 2007
priority date (Note) -
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Abstract
A method of fabricating a semiconductor device with a composite contact is provided. The fabrication includes forming the composite contact to a semiconductor layer in a semiconductor structure. The composite contact is formed by forming a DC conducting electrode attached to a semiconductor layer in a semiconductor structure and forming a capacitive electrode that is partially over the DC conducting electrode and extends beyond the DC conducting electrode. The composite contact provides a combined resistive-capacitive coupling to the semiconductor layer. As a result, a contact impedance is reduced when the corresponding semiconductor device is operated at high frequencies.
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