Three dimensional semiconductor memory devices
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United States of America Patent
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May 30, 2023
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N/A
app pub date -
Aug 19, 2021
filing date -
Jun 12, 2019
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Abstract
A three-dimensional semiconductor memory device includes first conductive lines extending horizontally in a first direction, a second conductive line extending vertically in a second direction perpendicular to the first direction, and memory cells at cross-points between the first conductive lines and the second conductive line. The first conductive lines are laterally spaced apart from each other in a third direction crossing the first direction. Each of the memory cells includes a variable resistance element and a switching element that are horizontally arranged. The variable resistance element includes a first variable resistance pattern and a second variable resistance pattern arranged in the second direction, a first electrode between the first variable resistance pattern and the first conductive line, a second electrode between the second variable resistance pattern and the second conductive line, and a third electrode between the first variable resistance pattern and the second variable resistance pattern.
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