Heteroepitaxial growth of germanium on silicon by UHV/CVD
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United States of America Patent
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Nov 9, 1993
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N/A
app pub date -
Jun 12, 1991
filing date -
Jun 12, 1991
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Expired
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Abstract
A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-9 Torr; heating the substrate to 300-375 degrees C; and providing a 10% GeH4, 90% He mixture of gas with a GeH.sub.4 partial pressure of 1-5 mTorr.
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